High-Q microwave dielectrics in low-temperature sintered (Zn1−xNix)3Nb2O8 ceramics

The effects of Ni substitution for Zn on microwave dielectric properties of (Zn1−xNix)3Nb2O8 (x = 0.02–0.08) ceramics were investigated in this study. The XRD patterns of the sintered samples reveal single-phase formation with a monoclinic structure. The tremendous improvement of Q × f value can be achieved by a small level of Ni substitution (x = 0.05). The τf value was found to decrease with a decreasing A-site bond valence. In addition, B2O3 and CuO were used as a sintering aid to lower the sintering temperature from 1180 to 900 °C. Excellent microwave dielectric properties (ɛr ∼ 20.7, Q × f ∼ 98,000 GHz and τf ∼ −85.2 ppm/°C) and a chemical compatibility with Ag electrodes can be obtained for 4 wt% B2O3–CuO doped (Zn0.95Ni0.05)3Nb2O8 ceramics sintered at 930 °C for 2 h. This constitutes a very promising material for LTCC applications.