کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1475376 991117 2009 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis and characterization of continuous freestanding silicon carbide films with polycarbosilane (PCS)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Synthesis and characterization of continuous freestanding silicon carbide films with polycarbosilane (PCS)
چکیده انگلیسی

A technique based on melt spinning of precursor was introduced to produce continuous freestanding SiC films. An equipment including spinneret, mandril, tank and seal groove was designed and manufactured for melt spinning. The polycarbosilane (PCS) precursors were deaerated, melt spun, crosslinked (by oxidation or irradiation), and pyrolyzed at high temperature in order to convert the initial PCS into freestanding SiC films. Our results revealed that the continuous freestanding SiC films, approximately 8 μm to 190 μm in thickness depended on setting, were uniform and dense. Their microstructure consisted of amorphous SiOxCy, β-SiC nano-crystals and free carbon. The photoluminescence (PL) spectrum showed two blue emissions at 416 nm and 435 nm. The continuous freestanding SiC films with high modulus, high density, high surface hardness and optoelectronic properties may have potential applications in microelectromechanical systems (MEMS), advanced optoelectronic devices and such complex-shaped materials.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 29, Issue 10, July 2009, Pages 2079–2085
نویسندگان
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