Effects of oxidation curing and Al atoms on the formation of near-stoichiometric freestanding SiC(Al) films derived from polyaluminocarbosilane (PACS)

The effects of oxygen pick-up and Al atoms on the formation and microstructure of freestanding SiC(Al) films by melt spinning of polyaluminocarbosilane (PACS) precursor were studied. PACS green films were cross-linked for 1 h, 2 h, 3 h and 4 h, pre-pyrolyzed at 900 °C, respectively. They were continuously pyrolyzed at 1800 °C to convert initial PACS into SiC(Al) ceramic films. Results reveal that the strict control of oxygen content during the oxidation curing is essential to produce near-stoichiometric SiC(Al) films. The microstructure of the dense films is a mixture of β-SiC crystals, α-SiC nano-crystals, C clusters and a small amount of Al4O4C and Al4SiC4. Al atoms which play important roles as both sintering aids and grain growth inhibitor are well distributed in the films due to the presence of stable composition and structure. SiC(Al) films with excellent mechanical properties would be attractive candidate materials for MEMS in harsh environments.