کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1476422 1510146 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Deposition of highly oriented lanthanum nickel oxide thin film on silicon wafer by CSD
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Deposition of highly oriented lanthanum nickel oxide thin film on silicon wafer by CSD
چکیده انگلیسی

This paper describes the orientation control and the electrical properties of the chemical solution deposition (CSD) derived LaNiO3 (LNO) thin film. The LNO precursor solutions were prepared using lanthanum nitrate and nickel acetate as La and Ni source, and ethanol or 2-methoxyethanol and 2-aminoethanol mixed solution as solvents. The LNO films were spin-coated using these precursor solutions and annealed at the temperature from 500 to 700 °C. The resulting LNO film annealed at 700 °C derived from 2-methoxyethanol and 2-aminoethanol mixed solvent exhibited (1 0 0)-orientation, with some surface cracks and pores, and relatively higher resistivity of 2.49 × 10−3 Ω cm. The LNO film derived from 2-methoxyethanol and 2-aminoethanol mixed solvent annealed at 700 °C in an oxygen atmosphere showed highly (1 0 0)-orientation, with higher density, a few cracks and pores, and exhibited a good electrical resistivity of 7.27 × 10−4 Ω cm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 27, Issues 13–15, 2007, Pages 3769–3773
نویسندگان
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