کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1478307 | 1510149 | 2006 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Annealing effect on dielectric property of AlN ceramics Annealing effect on dielectric property of AlN ceramics](/preview/png/1478307.png)
Effects of slow-cooling at high temperatures and annealing at intermediate temperatures on dielectric loss tangent of AlN ceramics were explored. Y2O3 was added as a sintering additive to AlN powders, and the powders were pressureless-sintered at 1900 °C for 2 h in a nitrogen flow atmosphere. In succession to the sintering, AlN samples were slow-cooled at a rate of 1 °C/min from 1900 to 1750 °C and/or annealed at 970 °C for 4 h. Al5Y3O12 was detected in the AlN ceramics obtained by the slow-cooling and AlYO3 was found in the ceramics cooled at a rate of 30 °C/min. AlN ceramics with a relative density of 0.986 were obtained by the slow-cooling method. On the other hand, very low tan δ values between 2.6 and 4.6 × 10−4 were obtained when the AlN ceramics were annealed at 970 °C for 4 h.
Journal: Journal of the European Ceramic Society - Volume 26, Issues 10–11, 2006, Pages 1831–1834