Effect of seeding layer on orientation control of potassium niobate thin film by CSD

This paper focuses on the orientation control of the KN thin film on Si wafer by chemical solution deposition (CSD). We selected the PbO layer and PZT layers as the seeding layer in order to control the crystal orientation of the resulting KN thin film. Crystalline phase in KN thin film was identified by XRD, and the degree of c-axis orientation was calculated from XRD analysis. The resultant KN thin film was orthorhombic perovskite single phase. As a result, highly c-axis oriented thin film (about 90%) was deposited by using PbO seeding layer. The dielectric constant of the resultant KN thin film was measured by impedance analyzer. The dielectric constant of highly c-axis oriented KN thin film was compared with that of the c-axis of KN single crystal.