کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1478378 | 1510149 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microwave dielectric properties of BaTi4O9 thin film
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
BaTi4O9 thin films have been prepared by RF magnetron sputtering on the Pt/Ti/SiO2/Si substrates and the dielectric properties of the BaTi4O9 film have been investigated at microwave frequency range. The homogeneous BaTi4O9 thin film was obtained when the film was grown at 550 °C and rapid thermal annealed (RTA) at 900 °C for 3 min. The circular-patch capacitor (CPC) was used to measure the microwave dielectric properties of the film. The dielectric constant (Ér) and the dielectric loss (tan δ) were successfully measured up to 6 GHz. The Ér of the BaTi4O9 thin film slightly increased with the increase of the film thickness. However, the tan δ decreased with increasing the thickness of the film. The Ér of BaTi4O9 thin film was similar to that of the BaTi4O9 ceramics, which is about 36-39. The tan δ of the film with 460 nm thickness was very low approximately, 0.0001 at 1-3 GHz. Since BaTi4O9 film has a high Ér and a low tan δ, the BaTi4O9 film can be used as the microwave devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 26, Issues 10â11, 2006, Pages 2165-2168
Journal: Journal of the European Ceramic Society - Volume 26, Issues 10â11, 2006, Pages 2165-2168
نویسندگان
Suk-Jin Lee, Bo-Yun Jang, Young-Hun Jung, Sahn Nahm, Hwack-Joo Lee, Young-Sik Kim,