Fabrication and characterization of all-perovskite oxide p-n junctions based on La1−xSrxMnO3 and Nb-1wt% doped SrTiO3

All-perovskite oxide p-n junctions have been fabricated by pulsed laser deposition. Semiconducting p-type La1−xSrxMnO3 (LSMO) and n-type Nb-1 wt% doped SrTiO3 (NSTO) were used. Thin films of LSMO were epitaxially grown on (1 0 0) NSTO single crystal substrate at 650 °C and under an ambient oxygen pressure of 100 mTorr. Heteroepitaxial relationship of (1 0 0)LSMO||(1 0 0)NSTO has been obtained. Good electrical rectifying characteristics have been observed at room temperature. LSMO is a well known colossal magnetoresistive material with a Curie temperature Tc at around room temperature. The I-V characteristics of the p-LSMO/n-NSTO junction were studied under the temperature range of 77-700 K and an applied magnetic field of up to 1 T.