کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1479004 | 991241 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure and dielectric properties of sol–gel 9/65/35 PLZT thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Ferroelectric lead lanthanum zirconate titanate thin films were prepared by a sol–gel method on Pt(1 1 1)/TiO2/SiO2/Si substrate. The texture selection was observed to be very sensitive to the preparation routine and samples with different preferred orientation were produced. The large- or fine-grained microstructure was observed depending on film thickness. The dielectric measurements of 360 nm thick film performed in the frequency window 10 Hz÷2 MHz revealed the typical relaxor behaviour. The strong dispersion of dielectric permittivity was observed and the temperature shift of maximum of imaginary part of dielectric permittivity with measured frequency was fitted well with the Vogel-Fulcher law.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 25, Issue 12, 2005, Pages 2285–2288
Journal: Journal of the European Ceramic Society - Volume 25, Issue 12, 2005, Pages 2285–2288
نویسندگان
A. Khodorov, M. Pereira, M.J.M. Gomes,