کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1480031 | 991441 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of annealing temperature and doping with Cu on physical properties of cadmium oxide thin films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of annealing temperature and doping with Cu on physical properties of cadmium oxide thin films Effect of annealing temperature and doping with Cu on physical properties of cadmium oxide thin films](/preview/png/1480031.png)
چکیده انگلیسی
In this research, pure and copper doped cadmium oxide thin films were prepared by Successive Ionic Layer Adsorption and reaction (SILAR) method using cadmium acetate as the Cd source (cation) and hydrogen peroxide (anion). Optical transmittance is measured by UV–visible spectrophotometer, it is revealed that the copper doping and annealing at 300 °C improves the transmittance of these films. The optical band gap of CdO increased to (2.8 eV) with Cu doping, but it is decreased to (2.4 eV) with annealing. The results show that the pure and doped CdO thin films at annealing temperature of 300 °C have grain size in the range of 19.1 nm and 44.4 nm, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Materials Research and Technology - Volume 2, Issue 2, April–June 2013, Pages 182–187
Journal: Journal of Materials Research and Technology - Volume 2, Issue 2, April–June 2013, Pages 182–187
نویسندگان
Abdul-Hussein K. Elttayef, Hayder M. Ajeel, Ausama I. Khudiar,