Surface pattern recording in Sb2Se3 thin films

Highlight
• The surface of Sb–Se thin film has been modified by EB irradiation followed by wet-etching.
• The fidelity of patterning and the ability to form grayscale features in Sb2Se3 thin films was established.
• The achieved resolution of these resists is 1 μm.

Results on the modification of Sb2Se3 thin film surface topology by irradiation followed by wet-etching are given. Comparison of study results revealed the possible role of purely electronic and thermal processes in the relief formation. The latter is supposed to be connected with radiation-induced defect creation, free volume increase under the increased fluidity conditions as well as with the possible additional influence of electrostatic forces and stress. Changes in surface characteristics are presented and potential applications of this treatment are discussed.