کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1481529 991531 2012 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical and electrical properties of as-prepared and annealed (Se80Te20)100 − xAgx (0 ≤ x ≤ 4) ultra-thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Optical and electrical properties of as-prepared and annealed (Se80Te20)100 − xAgx (0 ≤ x ≤ 4) ultra-thin films
چکیده انگلیسی

Optical and electrical properties of the (Se80Te20)100 − xAgx (0 ≤ x ≤ 4) ultra-thin films have been studied. The ultra-thin films were prepared by thermal evaporation of the bulk samples. Thin films were annealed below glass transition temperature (328 K) and in between glass transition temperature and crystallization temperature (343 K). Thin films annealed at 343 K showed crystallization peaks for Se–Te–Ag phases in the XRD spectra. The transmission and reflection of as-prepared and annealed ultra-thin films were obtained in the 300–1100 nm spectral region. The optical band gap has been calculated from the transmission and reflection data. The refractive index has been calculated by the measured reflection data. It has been found that the optical band gap increases, but the refractive index, extinction coefficient, real and imaginary dielectric constant decrease with increase in Ag content. The optical band gap and refractive index show the variation in their values with increase in the annealing temperature. The extinction coefficient increases with increasing annealing temperature. The surface morphology of ultra-thin films has been determined using a scanning electron microscope (SEM). The measured dc conductivity, under a vacuum of 10− 5 mbar, showed thermally activated conduction with single activation energy in the measured temperature range (288–358 K) and it followed Meyer–Neldel rule. The dc activation energy decreases with increase in Ag content in pristine and annealed films. The results have been analyzed on the bases of thermal annealing effects in the chalcogenide thin films.


► Thin films of (Se80Te20)100 − xAgx system has been prepared by thermal evaporation technique.
► Transmission and reflection spectra of pristine and annealed thin films were obtained in the spectral region 300–1100 nm.
► Thin films are annealed below Tg (325) and in between Tg and Tc (343).
► Electric studies on (Se80Te20)100 − xAgx thin films have been done.
► Optical properties of Se–Te–Ag pristine and annealed thin films were found to be temperature dependent.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 358, Issue 20, 1 October 2012, Pages 2826–2834
نویسندگان
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