کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1481682 | 991538 | 2012 | 4 صفحه PDF | دانلود رایگان |
We describe two successful routes for generating ordered arrays of Si nanocrystals by using atomic force microscopy (AFM) and amorphous silicon thin films (200–400 nm) on Ti/Ni coated glass substrates. First, we show that field-enhanced metal-induced solid phase crystallization at room temperature can be miniaturized to achieve highly spatially localized (below 100 nm) current-induced crystallization of the amorphous silicon films using a sharp tip in AFM. In the second route, resistive nano-pits are formed at controlled positions in the amorphous silicon thin films by adjusting (lowering and/or stabilizing) the exposure currents in the AFM process. Such templated substrates are further used to induce localized growth of Si nanocrystals in plasma-enhanced chemical vapor deposition process. In both cases the crystalline phase is identified in situ as features of enhanced current in current-sensing AFM maps.
► We produce ordered crystalline features on a-Si:H films by 2 routes using AFM/CVD.
► The 1st route is using AFM to induce crystalline/non-crystalline pits on the a-Si.
► It is done by driving current through the film using the AFM tip as an electrode.
► Second route involves 2nd deposition of a mixed-phase Si film on pre-exposed films.
► After 2nd deposition we detect crystalline phase localized in previously a-Si pits.
Journal: Journal of Non-Crystalline Solids - Volume 358, Issue 17, 1 September 2012, Pages 2118–2121