Crystalline growth of germanium thin films on single crystal silicon substrates by solid phase crystallization

We have studied the epitaxial-like growth of germanium (Ge), due to solid phase crystallization (SPC) from amorphous Ge (a-Ge) deposited on single crystal silicon (Si) substrate. The crystalline growth of Ge following the orientation of Si substrates was successfully obtained by the SPC at 400 °C or higher. The preferential growth on Si (111) substrates continues up to 10,000 Å. Different orientations from the substrate orientation in XRD patterns are slightly observed in the growth on Si (100) substrates at 450 °C, but the preferential growth of (100) orientation continued in the whole film thickness in TEM images. The epitaxial-like growth of Ge may be more preferable on the Si (111) substrate than the (100) one.

► Epitaxial-like growth of Ge, due to SPC on single crystal Si, was obtained at 400 °C.
► Preterential growth on Si (111) substrates continues up to 10,000 Å.
► The SPC epitaxial-like growth of Ge is more preferable on the Si (111).