کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1481714 | 991538 | 2012 | 4 صفحه PDF | دانلود رایگان |

Two different growth mechanisms are compared for the fabrication of Si/SiO2 nanostructures on crystalline silicon (c-Si) to be used as hetero-emitter in high-efficiency solar cells: (1) The decomposition of substoichiometric amorphous SiOx (a-SiOx) films with 0 < x < 1.3 and (2) the dewetting of thin amorphous silicon (a-Si) layers.The grown layers are investigated with regard to their structural properties, their passivation quality for c-Si wafer substrates and their electrical properties in order to evaluate their suitability as a nanodot hetero-emitter. While by layer decomposition, no passivating nanodots could be formed, the dewetting process allows fabricating nanodot passivation layers at temperatures as low as 600 °C. The series resistance through Ag/[Si-nanodots in SiO2]/c-Si/Al structures for dewetting is similar to nanostructured silicon rich SiOx films. Still, a nanodot hetero-emitter which exhibits both a satisfying passivation of the substrate and induces a high band bending by doping at the same time could not be fabricated yet.
► We compare two growth mechanisms for the fabrication of Si/SiO2 nanostructures.
► Growth mechanisms are dewetting of SiOx and decomposition of amorphous silicon.
► We compare the structure, passivation and conductivity of the nanostructures.
► No passivation for decomposition, high band bending by doping.
► No dewetting for doped layers, temperature stable passivation.
Journal: Journal of Non-Crystalline Solids - Volume 358, Issue 17, 1 September 2012, Pages 2253–2256