کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1481720 | 991538 | 2012 | 4 صفحه PDF | دانلود رایگان |

In this work, the effect of hydrogen dilution on the Ge content of the film and the effect of bandgap grading in the a-Si1−xGex:H absorber near the p/i and the i/n interfaces on cell performance were discussed. The a-Si1−xGex:H single-junction solar cells were improved by employing both p/i grading and i/n grading. The i/n grading increased the VOC and the FF while it also reduced the JSC as compared to the cell without grading. Presumably the potential gradient established by the i/n grading facilitates the hole transport hereby improved by the FF. On the contrary, the potential barrier established by the p/i grading seemed to limit the cell performance and constrain the p/i grading width below 20 nm due to the drop in FF and JSC. Combining the effects of bandgap grading on the VOC, JSC and FF, the suitable thicknesses of the p/i and the i/n grading were 20 nm and 45 nm, respectively. Finally, the grading structures accompanied with further optimization in doped layers were integrated to achieve a cell efficiency of 8.59%.
► We improve the a-SiGe:H single-junction solar cell performance by bandgap grading.
► Effect of bandgap grading width on the solar cell performance was demonstrated.
► Effect of hydrogen dilution on film Ge content was also showed.
► The increase in hydrogen dilution increased the film Ge content significantly.
► Appropriate bandgap grading width improved VOC and FF while slightly reducing JSC.
Journal: Journal of Non-Crystalline Solids - Volume 358, Issue 17, 1 September 2012, Pages 2277–2280