Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C

► Ambipolar characteristics of a-SiGe:H TFTs fabricated at 200 °C were obtained. ► Subthreshold slope for both regions is an improvement for low-temperature TFTs. ► Spin-On Glass as the gate insulator improved the insulator-semiconductor interface. ► a-SiGe:H film has a higher Density of States due to the incorporation of Ge.