Structural and electrical properties of Germanium-doped Sb70Te30 eutectic thin films

► The phase transformation in eutectic films of Sb70Te30 doped with 2, 5 and 10 at % of Ge has been investigated. ► Addition of Ge increases the crystallization temperature and the effective activation energy of crystallization. ► In the amorphous phase Ge acts as an impurity and/or a defect center. ► In the crystalline phase Ge is probably incorporated into the Sb2Te crystalline structure.