کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1482317 991562 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical properties of Bi3.15Nd0.85Ti2.8-xZr0.2MnxO12 thin films with different Mn content synthesized by chemical solution deposition (CSD)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Electrical properties of Bi3.15Nd0.85Ti2.8-xZr0.2MnxO12 thin films with different Mn content synthesized by chemical solution deposition (CSD)
چکیده انگلیسی

Bi3.15Nd0.85Ti2.8-xZr0.2MnxO12 (BNTZM) thin films with various Mn content (x = 0, 0.005, 0.01, 0.03, and 0.05) have been prepared on Pt/Ti/SiO2/Si (100) substrates by a chemical solution deposition (CSD) technique. The crystal structures of BNTZM thin film have been analyzed by X-ray diffraction (XRD). The dependence of Mn contents on the ferroelectric, dielectric properties, and leakage current of these BNTZM films have been thoroughly investigated. The XRD analysis demonstrated that all the BNTZM thin films were of typical bismuth-layer-structured ferroelectrics (BLSF) polycrystalline structure and exhibited a highly preferred (117) orientation. Among these BNTZM films, the BNTZM thin film with Mn content equal to 0.01 exhibits the maximum remnant polarization (2Pr) of 48μC/cm2 and a low coercive field (2Ec) of 177 kV/cm. In addition, the BNTZM thin film with x = 0.01 (Mn) showed a fatigue-free behavior up to 1 × 1010 read/write cycles.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 357, Issue 10, 1 May 2011, Pages 2093–2096
نویسندگان
, , , ,