کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1482419 1510511 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Planar chalcogenide quarter wave stack filter for near-infrared
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Planar chalcogenide quarter wave stack filter for near-infrared
چکیده انگلیسی
A quarter wave stack dielectric filter with normal incidence pass band in near-infrared range was prepared from alternating high index contrast chalcogenide films. The prepared filter consists of a low index Ge-S spacer layer surrounded by two 4.0 pairs Sb-Se/Ge-S reflectors. Films were deposited using flash and thermal evaporation techniques. After deposition, the filter was annealed at 165 °C for 1 h. Optical reflectivity measurements of the annealed filter revealed a ∼63% normal incidence passband near 1540 nm. An ∼80% passband was recorded after illumination of the filter by the light with s-polarization at angles 35°, 45° and 55°, while its position shifted to 1451, 1476 and 1505 nm, respectively. A ∼75% passband appeared near 1436, 1467 and 1498 nm in response to illumination of the filter by the light with p-polarization at the same angles. The angular dependence of the reflectivity of dielectric multilayer can be exploited for filtering of incident light.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 355, Issues 28–30, 15 August 2009, Pages 1521-1525
نویسندگان
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