Role of Sb incorporation on the electrical and photoelectrical properties of Se-In glassy alloy

►Thin films of Se90In10-xSbx (x = 0, 2, 4 and 6 at.%) glassy alloys prepared by melt quenching technique, were deposited on glass substrate using thermal evaporation technique under vacuum. ►Composition dependence of dark and photo-conductivity measurements were carried out in all the thin films under study. ►Temperature and intensity dependence of the steady state photoconductivity has also been studied. ►A discontinuity in various photoelectrical parameters is observed at 2 at.% of Sb concentration which could be correlated with average coordination number at this particular composition. The obtained results are explained on the basis of chemically ordered network model and the topological model.