Characteristics of sputtered zinc-oxide films prepared by UBM sputtering for thin film transistors

► The ZnO films were prepared at room temperature by the unbalanced magnetron sputtering system with various RF powers and film thicknesses. ► The UBM sputter with an electromagnet for ZnO films had high growth rate. ► The electrical properties of ZnO films were improved with the increasing RF power and film thickness due to the enhancement of the crystallinity in ZnO films.