Structural and electrical properties of vapour phase grown Cd1 − xFexTe single crystals

Cd1 − xFexTe single crystals were prepared by vapour phase growth method in the composition range of 0 ≤ x ≤ 0.03. Chemical analysis, surface morphology, structural investigations and electrical properties were carried out by EDAX, SEM, XRD, TEM and transport technique, respectively. Microscopic variations between the target and actual compositions were noticed. Morphology studies revealed that dislocation aided growth is active in the present crystals. TEM and XRD studies confirmed that the samples of all compositions crystallized in zinc blende structure, and the lattice parameters varied almost linearly decreases with Fe content. At room temperature, the resistivity of the Cd1 − xFexTe crystals of all compositions (x = 0.01, 0.015, 0.02, 0.025 and 0.03) lies in the range of 3.5–6.5 M Ω, the activation energies lie in the range of 63–133 meV, and the samples were show the ‘p’ type conductivity.

Research Highlights
► Single crystals of Cd1−xFexTe were grown by vapour phase growth for concentrations 0≤x≤0.03.
► Both TEM and XRD analysis confirmed zinc blende structure for the present Cd1−xFexTe single crystals.
► The resistivity and activation energy of the crystals were decreased with increasing Fe content.