کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1483406 | 1510510 | 2009 | 6 صفحه PDF | دانلود رایگان |
Hydrogenated amorphous silicon thin films doped with chalcogens (Se or S) were prepared by the decomposition of silane (SiH4) and H2Se/H2S gas mixtures in an RF plasma glow discharge on 7059 corning glass at a substrate temperature 230 °C. The illumination measurements were performed on these samples as a function of doping concentration, temperature and optical density. The activation energy varied with doping concentration and is higher in Se-doped than S-doped a-Si:H thin films due to a low defect density. From intensity versus photoconductivity data, it is observed that the addition of Se and S changes the recombination mechanism from monomolecular at low doping concentration films to bimolecular at higher doping levels. The photosensitivity (σph/σd) of a-Si, Se:H thin films decreases as the gas ratio H2Se/SiH4 increased from 10−4 to 10−1, while the photosensitivity of a-Si, S:H thin films increases as the gas ratio H2S/SiH4 increased from 6.8 × 10−7 to 1.0×10−4.
Journal: Journal of Non-Crystalline Solids - Volume 355, Issues 31–33, 1 September 2009, Pages 1638–1643