کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1483418 | 1510496 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Film-thickness dependence of structural and electrical properties of boron-doped hydrogenated microcrystalline silicon prepared by radiofrequency magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Boron-doped hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by radiofrequency magnetron sputtering and the film-thickness dependence of the structural and electrical properties was investigated. The target was a boron-doped silicon wafer on which boron grains were put or not on top of it. At room temperature, the dark conductivities of the μc-Si:H thin films prepared without boron grains were below 10â 6 S cmâ 1. On the other hand, for the films prepared with boron grains having thickness above 50 nm, the conductivities were higher than 6 Ã 10â 1 S cmâ 1 and their activation energies were about 0.05 eV. As the film thickness was decreased, the dark conductivity decreased: â¼Â 10â 1 S cmâ 1 for the 20 nm film and â¼Â 10â 6 S cmâ 1 for the 10 nm film. This decrease was caused by the decrease in the crystalline volume fraction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 356, Issues 23â24, 15 May 2010, Pages 1131-1134
Journal: Journal of Non-Crystalline Solids - Volume 356, Issues 23â24, 15 May 2010, Pages 1131-1134
نویسندگان
Akimori Tabata, Junya Nakano, Koji Mazaki, Kota Fukaya,