Interfacial structure of oxidized inner pores in precursor-derived Si–C–N ceramics

Inner pore channels were commonly found in precursor-derived Si–C–N ceramics. After annealing in air at 1420 °C, their oxidation structures were investigated by analytical TEM. A carbon-rich ring was frequently observed under the silica layer inside the pore channels, which consisted of graphite-like clusters in size of 20–30 nm. Origin of such interfacial structure is due to the excessive free-carbon in the amorphous Si–C–N matrix that had survived the oxidation process. This graphitic interface could further improve the oxidation resistance of the SiO2 over-layer. This novel interfacial structure was also found by annealing in N2, reaffirming the effect of composition of Si–C–N matrix.