GeSe/GeS nanomultilayers prepared by pulsed laser deposition

Cyclic pulsed laser deposition technique was used for the fabrication of chalcogenide GeSe/GeS nanomultilayers with ∼10 nm modulation period. Low-angle X-ray diffraction technique revealed good periodicity of prepared multilayered materials. The films are sensitive to annealing and illumination by 532 nm laser; both processes lead to refractive index decrease and blue shift of the short-wavelength absorption edge, respectively, connected with interdiffusion processes between the individual layers. Light-induced bleaching of the films is accompanied by giant volume-changes (up to 10% expansion) as observed by atomic force microscopy. These can be used for direct surface patterning and relief formation.