کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1484052 | 1510519 | 2008 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Characteristics of sputtered amorphous carbon films prepared by a closed-field unbalanced magnetron sputtering method Characteristics of sputtered amorphous carbon films prepared by a closed-field unbalanced magnetron sputtering method](/preview/png/1484052.png)
We discuss the tribological performance of sputtered amorphous carbon (a-C) films deposited by closed-field unbalanced magnetron (CFUBM) sputtering with a graphite target using a mixture of helium (He) and argon (Ar) as sputtering gases. We investigated the effects of the graphite target power density on the micro-structural and physical properties. In the Raman spectra, the G-peak position moved to the higher wavenumbers. The ID/IG ratio increased with the increase of target power density in the fixed DC bias voltage. This was the result of the structural change in the a-C film that resulted with the increase in sp2 bonding fraction. Also, the maximum hardness of the a-C film was 23 GPa, the friction coefficient was 0.1, and the critical load was 25.9 N on the Si wafer. In addition, the compressive residual stress of the film increased a little with increasing target power density. Consequently, the various properties of a-C films, with an increase of the target power density, were associated with the increase of cross-linked sp2 bonding fraction and the cluster size. The tribological properties of a-C film showed clear dependence on the energy of ion bombardment with the increase of plasma density during film growth.
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 52–54, 15 December 2008, Pages 5504–5508