کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1484642 | 1510525 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique](/preview/png/1484642.png)
چکیده انگلیسی
Hydrogen profiling, i.e., decreasing the H2 dilution during deposition, is a well-known technique to maintain a proper crystalline ratio of the nanocrystalline (nc-Si:H) absorber layers of plasma-enhanced chemical vapor-deposited (PECVD) thin film solar cells. With this technique a large increase in the energy conversion efficiency is obtained. Compared to PECVD, the unique characteristics of hot-wire CVD (HWCVD), such as the catalytic reactions, the absence of ion bombardment, the substrate heating by the filaments and filament aging effects, necessitate a different strategy for material and device optimization. We report in this paper the results of using a reverse H2 profiling technique, i.e., increasing the H2 dilution of silane instead of decreasing it, to improve the quality of HWCVD intrinsic nc-Si:H and the performance of this material in single junction n-i-p cells. Thus far, the efficiency of nc-Si:H n-i-p cells made on a stainless steel substrate with an Ag/ZnO textured back reflector has been improved to 8.5%, and the efficiency of triple junction solar cells with a structure of proto-Si:H(HWCVD) top cell/proto-SiGe:H (PECVD) middle cell/nc-Si:H (HWCVD, with reverse H2 profiling) bottom cell has reached 10.9%. These efficiency values show the viability of n-i-p cells comprising HWCVD nanocrystalline i-layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19â25, 1 May 2008, Pages 2087-2091
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19â25, 1 May 2008, Pages 2087-2091
نویسندگان
H. Li, R.H. Franken, R.L. Stolk, C.H.M. van der Werf, J.K. Rath, R.E.I. Schropp,