کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1484661 | 1510525 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of chromium silicide thin layer formed on amorphous silicon films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A detailed investigation of the compositional, optical and electrical properties of a chromium silicide layer grown at room temperature on top of doped amorphous silicon films is presented. The formation of the layer is promoted only when phosphorous atoms are present in the film. The deposition of a very thin n-type doped layer (around 5Â nm) on top of a p-type doped film has allowed us to achieve the chromium silicide formation also on p-type material without changing its doping properties. Angle resolved X-ray photoelectron spectroscopy measurements demonstrate the presence of chromium-oxide, chromium silicide and metallic chromium in similar percentages for both p- and n-type doped layers. From the ellipsometric analysis, the refractive index spectra have been extracted, and the layer thickness has been estimated to be 5Â nm for both p- and n-type doped layers. From planar conductivity measurements, we have found that the chromium silicide promotes an activation energy reduction from 0.24Â eV down to 0.017Â eV for the n-type layer and from 0.36Â eV down to 0.14Â eV for the p-type film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19â25, 1 May 2008, Pages 2171-2175
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19â25, 1 May 2008, Pages 2171-2175
نویسندگان
D. Caputo, G. de Cesare, M. Ceccarelli, A. Nascetti, M. Tucci, L. Meda, M. Losurdo, G. Bruno,