Correlation between the photoluminescence and different types of Si nano-clusters in amorphous silicon

This paper presents the results of PL spectrum study for Si nano-clusters in amorphous silicon matrix. The hydrogenated amorphous Si layers were prepared by the hot-wire CVD method on glass substrates. The layers were deposited at different wafer temperatures 280, 360, 420 and 460 °C and at one filament temperature of 1650 °C. The joint analysis of PL and X-ray diffraction spectra in dependence on the technological conditions and on different sizes of Si nano-clusters has been done. The mechanisms of PL are discussed as well.