کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1484719 | 1510525 | 2008 | 5 صفحه PDF | دانلود رایگان |
The effect of a-Si:H i/p buffer layer on the performance of nc-Si:H solar cells is studied systematically. The results show that for thin nc-Si:H cells, an optimized i/p buffer layer significantly reduces the dark current thus increases the open-circuit voltage. We believe that the carrier recombination at the i/p interface is one of the determining factors for the nc-Si:H cell performance, especially for cells with a thin intrinsic layer. Therefore, optimizing the i/p buffer layer is one of the key factors for achieving high efficiency nc-Si:H solar cells. This interface effect is less pronounced as the nc-Si:H intrinsic layer thickness increases, where the recombination in the bulk becomes a dominant factor. Combining the improved nc-Si:H intrinsic layer with a proper hydrogen dilution and an optimized a-Si:H i/p buffer layer, the performance of nc-Si:H single-junction and a-Si:H/a-SiGe:H/nc-Si:H triple-junction cells is significantly improved.
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19–25, 1 May 2008, Pages 2440–2444