کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1484734 | 1510525 | 2008 | 4 صفحه PDF | دانلود رایگان |
We investigated the electrical properties of polycrystalline silicon (poly-Si) thin film transistors (TFTs) employing field-enhanced solid phase crystallization (FESPC). An n+ amorphous silicon (n+ a-Si) layer was deposited to improve the contact resistance between the active Si and source/drain (S/D) metal instead of ion doping. By using C–V measurement method, we could explain the diffused phosphorous ions (P+ ions) on the channel surface caused a negatively shifted threshold voltage (VTH) of −7.81 V at a drain bias of 0.1 V, and stretched out a subthreshold swing (S) of 1.698 V/dec. This process was almost compatible with the widely used hydrogenated amorphous silicon (a-Si:H) TFT fabrication process and also offers a better uniformity when compared to the conventional laser-crystallized poly-Si TFT process because of non-laser crystallization.
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19–25, 1 May 2008, Pages 2509–2512