کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1484833 1510531 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dielectric relaxation of Al/Lu2O3/Al thin film structures from 10 μHz to 10 MHz
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Dielectric relaxation of Al/Lu2O3/Al thin film structures from 10 μHz to 10 MHz
چکیده انگلیسی

Results of dielectric studies of lutetium sesquioxide layers examined in Al/Lu2O3/Al thin film sandwiches are reported. The dielectric measurements were carried out in the frequency range 10−5–107 Hz and for temperatures from 292 K to 500 K. Results are presented as plots of frequency functions: the capacitance, the dielectric loss factor, tan δ(f) and also on the complex plane as Cole–Cole plots and Nyquist plots. The influence of the external voltage on C(U) and tan δ(U) was examined. Experimental data were analyzed taking into account thin insulating Lu2O3 film, near-electrode regions of Al/Lu2O3 and Lu2O3/Al interfaces and series resistance of electrodes and leads. The parameters of Lu2O3 film, near-electrode regions and resistance of contacts and leads were determined.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 353, Issues 47–51, 1 December 2007, Pages 4400–4404
نویسندگان
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