کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1484997 1510530 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of Pb impurity on the localized states of Se–Ge glassy alloy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Effect of Pb impurity on the localized states of Se–Ge glassy alloy
چکیده انگلیسی

Space charge limited conduction (SCLC) is investigated in vacuum evaporated thin films of (Ge20Se80)1−xPbx (x = 0, 0.02, 0.04, 0.06). I–V characteristics have been measured at various fixed temperatures. At high fields (∼104 V cm−1), current could be fitted to the theory of space charge limited conduction in case of uniform distribution of localized states in the mobility gap of these materials. Using the above theory, the density of localized states near Fermi level is calculated. A reversal in density of localized states is obtained at 4 at.% of Pb.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 353, Issues 52–54, 15 December 2007, Pages 4718–4722
نویسندگان
, ,