کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1485297 1510537 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characteristics of p-type nanocrystalline silicon thin films developed for window layer of solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Characteristics of p-type nanocrystalline silicon thin films developed for window layer of solar cells
چکیده انگلیسی

Different rf-power and chamber pressures have been used to deposit boron doped hydrogenated silicon films by the PECVD method. The optoelectronic and structural properties of the silicon films have been investigated. With the increase of power and pressure the crystallinity of the films increases while the absorption decreases. As a very thin p-layer is needed in p–i–n thin film solar cells the variation of properties with film thickness has been studied. The fraction of crystallinity and thus dark conductivity vary also with the thickness of the film. Conductivity as high as 2.46 S cm−1 has been achieved for 400 Å thin film while for 3000 Å thick film it is 21 S cm−1. Characterization of these films by XRD, Raman Spectroscopy, TEM and SEM indicate that the grain size, crystalline volume fraction as well as the surface morphology of p-layers depend on the deposition conditions as well as on the thickness of the film. Optical band gap varies from 2.19 eV to 2.63 eV. The thin p-type crystalline silicon film with high conductivity and wide band gap prepared under high power and pressure is suitable for application as window layer for Silicon thin film solar cells.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 353, Issues 22–23, 1 July 2007, Pages 2289–2294
نویسندگان
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