کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1485409 | 1510538 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic structure and short- and medium-range order parameters in amorphous chalcogenide films prepared by different methods
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The atomic structure of amorphous As2Se3 and As2S3 films prepared by thermal evaporation in a vacuum and by RF ion-plasma sputtering has been studied by the methods of X-ray diffraction and Raman spectroscopy. The techniques of film preparation had different conditions of substance vaporization and atom condensation on a substrate. It has been established that films prepared by these methods have significant differences in the dimensions of the medium-range order and in the local atomic structure, which causes considerable differences in their electronic properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 353, Issues 18â21, 15 June 2007, Pages 2057-2061
Journal: Journal of Non-Crystalline Solids - Volume 353, Issues 18â21, 15 June 2007, Pages 2057-2061
نویسندگان
Sh.Sh. Sarsembinov, O.Yu. Prikhodko, A.P. Ryaguzov, S.Ya. Maksimova, V.Zh. Ushanov,