Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer

This work reports the effect of the presence of a Ni buffer layer on the photoluminescence (PL) of SiCxNy nanoparticle films prepared by RF plasma magnetron sputtering process in a reactive N2 + Ar + H2 gas mixture. An introduction of a Ni buffer of 80 nm or thicker remarkably improves the PL of the films. Annealing in a temperature range of 400-1100 °C is found to significantly affect the PL intensity. Optimal PL is achievable at 600 °C. X-ray photoelectron and Fourier-transform infrared spectroscopy suggest that the strong PL is directly related to the composition of the SiCxNy nanoparticle and the concentration of Si-O, and Si-N bonds. The results are relevant to the development of wide bandgap optoelectronic devices.