کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1485671 1510540 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature Er3+ emission in Ge–S–Ga glasses excited by host absorption
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Low-temperature Er3+ emission in Ge–S–Ga glasses excited by host absorption
چکیده انگلیسی

The photoluminescence (PL) of a series of (GeS2)80(Ga2S3)20 glasses doped with different amounts of Er (0.17, 0.35, 0.52, 1.05 and 1.39 at.%) at 77 and 4.2 K has been studied. The influence of the temperature on the emission cross-section of the PL bands at ∼1540, 980 and 820 nm under host excitation has been defined. A quenching effect of the host photoluminescence has been established from the compositional dependence of the PL intensity. It has been found that the present Er3+-doped Ge–S–Ga glasses posses PL lifetime values about 3.25 ms.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 353, Issues 13–15, 15 May 2007, Pages 1418–1421
نویسندگان
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