کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1486121 | 1510552 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
XPS study of pulsed Nd:YAG laser oxidized Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: XPS study of pulsed Nd:YAG laser oxidized Si XPS study of pulsed Nd:YAG laser oxidized Si](/preview/png/1486121.png)
چکیده انگلیسی
X-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented. The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established that the oxide is non-stoichiometric, and contains all oxidation states of Si in different amounts throughout the film. The interface Si/laser-grown oxide is not abrupt, and the coexistence of Si2O3 and Si2O suboxides in a relatively wide interfacial region is found. It is concluded that post-oxidation annealing is necessary in order to improve the microstructure of both oxide and near interface region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 352, Issues 28–29, 15 August 2006, Pages 3134–3139
Journal: Journal of Non-Crystalline Solids - Volume 352, Issues 28–29, 15 August 2006, Pages 3134–3139
نویسندگان
G. Aygun, E. Atanassova, K. Kostov, R. Turan,