Characterization of homoepitaxial diamond for ionizing radiation detectors

Synthetic diamond has been proven as an important material for advanced electronic applications, such as those encountered in high energy physics and astrophysics. In fact, diamond transparency to visible light, its high carrier mobility, high breakdown field and strong resistance to chemical attack and radiation damage have suggested the potential application of this material for 'solar-blind' UV detectors which have to operate in extreme environments. To avoid the possible problems connected with the presence of grain boundaries in polycrystalline diamond films, a great effort has been devoted to the optimization of the growth process leading to high-quality single-crystal diamond on diamond substrates (homoepitaxy). In this view, characterization studies play a crucial role, because they provide the feedback for the optimization of the deposition process, in order to obtain the best quality material. In this work, a characterization study of homoepitaxial diamond grown by chemical vapor deposition (CVD) on synthetic diamond substrates is presented. The samples have been deposited in a CVD tubular reactor using a CH4-H2 gas mixture (1-7%) at approximately 560 °C substrate temperature. The growth rate ranged between 0.9 μm/h and 2.2 μm/h, microwave powers between 520 W and 720 W. The crystalline quality of the diamond layer has been studied by means of Raman spectroscopy. Photoluminescence has been used to study the nature and the distribution of impurities, having energy levels in the diamond band gap, which influence negatively the electronic quality of the material. The results have been compared with electro-optical characterization of UV detectors for astrophysics based on the analyzed diamond samples. The growth parameters which guarantees both high material quality and optimal device response have been determined.