کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1486299 1510556 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thirty years trajectory of amorphous and nanocrystalline silicon materials and their optoelectronic devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Thirty years trajectory of amorphous and nanocrystalline silicon materials and their optoelectronic devices
چکیده انگلیسی

A review is given on research trajectory of hydrogenated amorphous and nanocrystalline silicon (a-Si:H and nc-Si) materials with their device applications ongoing since the period of 1970. A brief explanation on the motivation to start amorphous semiconductors research is given to produce a new kind of synthetic semiconductor having continuous energy gap controllability with valency electron controllability. Due to the result of some basic research on the film quality improvement of a-Si:H and nc-Si, some innovative devices had been developed since middle of 1980s in R&D phase such as a-SiC/a-Si heterojunction solar cells, a-Si/a-SiGe and also a-Si/nc-Si tandem type solar cells. Finally, the state of the art on the industrialization of the new devices is introduced and discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 352, Issues 9–20, 15 June 2006, Pages 863–867
نویسندگان
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