Rapid recrystallization of amorphous silicon utilizing the plasma jet at atmospheric pressure

The rapid recrystallization of amorphous silicon utilizing the very high frequency (VHF) plasma jet of argon at atmospheric pressure is presented. Highly crystallized polycrystalline Si film was synthesized by optimizing the translating velocity of the substrate stage and flow rate of argon. The temperature of the plasma exposure area reached at 1300 °C and the recrystallization of a-Si proceeded with a time constant of 10–50 ms. The effects of the translating velocity of the substrate stage and flow rate of argon on the rapid recrystallization of a-Si are demonstrated along with its mechanism.