Numerical modeling of thermally-stimulated currents for the density-of-states determination in thin-film semiconductors

The paper reports on thermally stimulated conductivity studies used for characterization of the density of states profile in thin film semiconductors, by numerically solving the non-linear time-dependent rate equations for free and trapped charge. We explore the derivation of energy and density scales from temperature and conductivity data. We examine the distinction between ‘strong’ and ‘weak’ re-trapping and the use of low ‘effective’ values of attempt-to-escape frequencies in establishing an energy scale, and the ad hoc inclusion of a temperature-dependent lifetime. It is confirmed for several illustrative model systems that the technique can afford surprisingly good fidelity in recovery of the density of states under a range of conditions.