کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1486350 | 1510556 | 2006 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy](/preview/png/1486350.png)
A photocurrent time-of-flight study of carrier transport in microcrystalline silicon pin diodes prepared over a range of crystallinities is presented. Electron and hole drift mobilities at a crystalline volume fraction >0.35 are typically 3.8 and 1.3 cm2/(V s) respectively at 300 K and a thickness to electric field ratio of 1.8 × 10−7 cm2/V. A factor of five enhancement in hole mobility over amorphous silicon persists at a crystalline volume fraction as low as 0.1. Current decays are dispersive and mobilities are thermally activated, although detailed field-dependence is still under investigation. Evidence for a sharp fall in the density of states at 0.13 eV above the valence band edge is presented. Similarities in behaviour with certain amorphous and polymorphous silicon samples are identified.
Journal: Journal of Non-Crystalline Solids - Volume 352, Issues 9–20, 15 June 2006, Pages 1093–1096