کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1486388 | 1510556 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Superior structural and electronic properties for amorphous silicon–germanium alloys deposited by a low temperature hot wire chemical vapor deposition process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Very good electronic properties of hot-wire CVD a-Si,Ge:H alloys have been established by junction capacitance methods. The samples were deposited using a tantalum filament maintained at about 1800 °C instead of the usual 2000 °C tungsten filament process. Urbach energies below 45 meV were found, as well as annealed defect densities below 1016 cm−3, for Ge fractions up to 30 at.%. However, samples with 1019 cm−3 levels of oxygen exhibited much broader Urbach energies and higher defect densities. Light induced degradation was examined in detail for one a-Si,Ge:H alloy sample and compared to the behavior of PECVD grown a-Si:H alloys of similar optical gap.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 352, Issues 9–20, 15 June 2006, Pages 1250–1254
Journal: Journal of Non-Crystalline Solids - Volume 352, Issues 9–20, 15 June 2006, Pages 1250–1254
نویسندگان
Shouvik Datta, Yueqin Xu, A.H. Mahan, Howard M. Branz, J. David Cohen,