Electrical properties of bulk amorphous semiconductor (GaSb)38Ge24

Temperature dependences of the dc conductivity and thermopower of a (GaSb)38Ge24 homogeneous bulk amorphous alloy are investigated at 110–425 K and at 180–400 K, respectively. The samples were prepared by spontaneous solid-state amorphization of a quenched crystalline high-pressure phase heated from 77 to 430 K at ambient pressure. In contrast to the parent amorphous GaSb compound exhibiting an unusual combination of electrical properties, amorphous (GaSb)38Ge24 is found to be a typical p-type semiconductor well described by the conventional Mott–Davis model.