I–V Characteristics of tris(2,4-pentanedionato)manganese(III) thin films

Amorphous thin films of tris(acetylacetonate)manganese(III) were deposited on Si(P) substrates by thermal sublimation in vacuum. The deposited films were probed with X-ray fluorescence. Their electrical properties were studied as insulators for Al/Mn(acac)3/Si(P) metal–insulator–semiconductor devices. Those devices were characterized by the measurement of the gate-voltage dependence of their capacitance, from which the relative permittivity (RP) and density of the charges in the insulator were determined. It was found that values of the RP of tris(acetylacetonate)manganese(III) films grown on Si(P) wafers were in the range of 30–40, which can be find applications in gate related technological uses. The dc-electrical conduction in the complex film was studied at room temperature and in temperature range of (293–325 K). It was found that the data of the as-deposited films follow the trap-charge-limited space-charge-limited conductivity (TCL-SCLC) mechanism, while the data of the annealed sample in vacuum of about 10−3 Pa at about 100 °C for 10 min obey the Richardson–Schottky (RS) mechanism. The parameters of both mechanisms were determined. It was concluded that the density of charged defects in the insulating film is critically determined the mechanism of the current-transfer.