کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1493190 | 1510774 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of impurities and growth parameters on the quality of Tl3AsSe3 optical crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Thallium arsenic selenide (Tl3AsSe3) stoichiometric source materials suitable for crystal growth was synthesized in a horizontal furnace using purified parent components Tl, As and Se. Single crystal was grown using a two zone vertical Bridgman furnace using capillary for nucleation. A thermal gradient 18-20Â K/cm and growth speed of 1Â cm/day was used in vertical Bridgman furnace during crystal growth. Crystals were free from micro cracks and precipitates and demonstrated good fabricability. Results indicated that lower gradient and low growth rate are key to reduce thermal stresses in this ternary Tl-As-Se material system. Measured dielectric values in the range of 10Â Hz to 100Â KHz were almost constant indicating its suitability for applications in a range of frequency where constant dielectric is required.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 60, October 2016, Pages 81-85
Journal: Optical Materials - Volume 60, October 2016, Pages 81-85
نویسندگان
N.B. Singh, Ching-Hua Su, Bradley Arnold, Fow-Sen Choa, Teja Nagaradona,