کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1493500 1510780 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Gamma irradiation effect on optical and dielectric properties of potassium dihydrogen phosphate crystals
ترجمه فارسی عنوان
اثر تابش گاما بر خواص نوری و دی الکتریک بلورهای فسفات دی هیدروژن پتاسیم
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
چکیده انگلیسی


• The irradiation-induced defect model has been established.
• Fluorescence spectra of KDP crystals demonstrate the formation of new defects.
• Variation of vacancy defects is performed by positron lifetime spectroscopy.
• Doppler broadening results prove new vacancy-defects formed induced by γ-ray.

The effect of Co60 gamma-ray irradiation on potassium dihydrogen phosphate crystals is investigated at doses ranging from 1 kGy to 100 kGy with different diagnostics, including UV–Vis absorption spectroscopy, fluorescence spectroscopy, DC electrical conductivity, positron annihilation lifetime spectroscopy and Doppler-broadening spectroscopy. The optical absorption spectra show a wide absorption band between 250 and 400 nm after γ-irradiation and its intensity increases with the increasing irradiation dose. The simulation of radiation defects show that this absorption is assigned to the formation of substitutional impurity defects due to Al, Mg ions substituting for K ions. The fluorescence peak at 355 nm blue shifts after irradiation. The fluorescence intensity is observed to increase with the increasing irradiation dose. The positron annihilation lifetime spectroscopy is used to probe the evolution of vacancy-type defects in potassium dihydrogen phosphate crystal. The variation of size and concentration of vacancy-type defects with the different irradiation dose is investigated. The Doppler-broadening spectroscopy gives direct evidence of the formation of irradiation-induced defects. The dc electrical conductivity of γ-irradiated potassium dihydrogen phosphate crystals increases with the increasing irradiation dose when the dose is less than 10 kGy, whereas keeps constant at high irradiation dose of 100 kGy. The increase of electrical conductivity is associated with the increase of the proton defect concentration in the crystal. A possible explanation about the change of proton defect concentration with irradiation dose is presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 54, April 2016, Pages 238–244
نویسندگان
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